Solid State Amplifier Module
Model SSM1-400M-300W
400–1000 MHz
300 watts
Minimum Rated Power
Features Include:
- Solid-Sate Amplifier Module
- Operate below maximum Ratings
- Power Amplifier Modules
- Sixth generation LDMOS Transistors
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IFI’s SSM1-400M microwave Solid-State RF Power Amplifier Module provides outstanding RF performance. These RF microwave amplifier modules are available in other frequency ranges and power levels.
IFIs RF “Solid-State” power amplifier modules are conservatively designed to operate below maximum ratings for ruggedness and long term reliability. Sixth generation LDMOS Transistors provide reliable brute-power performance at frequencies up to 1.0GHz. A product & design built to last!
IFI also utilizes GaN amplifier (gallium nitride) technology to create broadband and wideband solid-state amplifier modules. please consult IFI for additional information.
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| IFI SSM1-400M-300W Solid State Amplifier Module Specifications |
| Frequency: |
400MHz-1.0GHz |
| P1dB Power: |
300W minimum, 350W nominal |
| Gain: |
18dB Average |
| Load: |
> 6:1 for all Phase Angles. |
| Voltage: |
45 Volts DC |
| Drain Current: |
up to 20 Amps |
| Amp Enable: |
0 VDC |
| Blank off: |
5 VDC |
| Impedance: |
50 Ohms |
| Average Efficiency: |
44% |
| Power In: |
5-6 watts nominal for 300W |
| Harmonics: |
-20dBc |
| Base Operating Temp: |
60 degrees C |
| Non-Operating Temp: |
-40C to +100 degrees C |
IFI's RF solid state amplifier modules are now using GaN (Gallium Nitride Amplifier technology), which is perfect for both broadband and wideband applications.
For Typical Test Data Download the PDF here...
Specfications are subject to change without noticification
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