This Application Note outlines and describes the technology of "GaN Amplifiers " and its effects on advanced broadband and wideband testing amplifier designs.

Introduction:
Improvements in solid-state power amplifiers depend on advances in transistors. The Engineers here at IFI continuously receive the most current transistor technology available by working closely with all the transistor foundries. Fortunately, evolving gallium nitride (GaN) high-electron-mobility-transistor (HEMT) technology is bringing many benefits to high-frequency amplifier designers here at IFI. A key advantage of GaN HEMT devices operating at > 2000 MHz compared to other transistor technologies is the high power density possible from relatively small transistor cells.

At frequencies over 1GHz, GaN HEMTs offer much higher efficiency, bandwidth, and power advantages compared to Si LDMOS FETs for a variety of reasons...

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| GaN | amplifier | gallium nitride amplifier | GaN amplifier technology | amplifiers |
| broadband amplifiers | wideband amplifiers | HEMT technology |

Specfications are subject to change without noticification © IFI-2011

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